KBU8G [BL Galaxy Electrical]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
KBU8G
型号: KBU8G
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

二极管
文件: 总2页 (文件大小:107K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GALAXY ELECTRICAL  
KBU8A---KBU8M  
BL  
VOLTAGE RANGE: 50 --- 1000 V  
SILICON BRIDGE RECTIFIERS  
CURRENT: 8.0A  
FEATURES  
Rating to 1000V PRV  
KBU  
.933(23.7)  
.894(22.7)  
.280(7.1)  
.260(6.6)  
Surge overload rating to 250 Amperes peak  
Ideal for printed circuit board  
.185(4.7)  
.165(4.2)  
.160(4.1)  
.140(3.6)  
0
45  
.085(2.2)  
.065(1.7)  
Reliable low cost construction utilizing molded  
plastic technique results in inexpensive product  
Lead solderable per MIL-STD-202 method 208  
.700(17.8)  
.760(19.3)Max .660(16.8)  
+
+
.075(1.9)R.TYP.  
(2 PLACES)  
.455(11.3)  
.405(10.3)  
_
~
~
+
.205(5.2)  
.185(4.7)  
.260(6.6)  
.180(4.5)  
1.0(25.4)Min  
.052(1.3)  
.048(1.2)  
.220(5.6)  
.180(4.6)  
Dimensions in inches and (mm)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
KBU KBU  
KBU KBU KBU KBU KBU  
UNITS  
8A  
8B  
8D  
8G  
8J  
8K  
8M  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average forw ard  
100  
1000  
A
8.0  
IF(AV)  
output current  
@TA=50  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
A
V
IFSM  
250.0  
Maximum instantaneous forw ard voltage  
@ 4.0 A  
1.0  
VF  
IR  
A
Maximum reverse current  
@TA=25  
10.0  
1.0  
μ
mA  
at rated DC blocking voltage @TA=100  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 125  
- 55 ---- + 150  
TJ  
TSTG  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
1.  
Document Number 0287024  
RATINGS AND CHARACTERISTIC CURVES  
KBU8A---KBU8M  
FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE  
FIG.2 -- MAXIMUM FORWARD SURGE CURRENT  
8
6
250  
225  
200  
8.3ms Single Half Sine Wave  
TJ=125  
4
175  
150  
2
MOUNTES ON 4:4 INCH CPUFER  
125  
PC BOARD  
0.5"(12.7mm) Lead length  
100  
75  
0
0
25  
50  
75  
100 125  
150  
175  
1
2
5
10  
20  
50  
100  
NUMBER OF CYCLES AT60H  
Z
AMBIENT TEMPERATURE,  
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC  
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC  
10  
100  
40  
20  
TJ=100  
1
10  
4.0  
2.0  
1.0  
.1  
TJ=25  
Pulse Width  
0.4  
=300µS  
TJ=25  
0.2  
0.1  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
.01  
0
20  
40  
60  
80  
100 120  
140  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE  
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER ELEMENT  
400  
TJ=25  
100  
50  
10  
1
10  
100  
REVERSE VOLTAGE, VOLTS  
www.galaxycn.com  
2.  
BLGALAXY ELECTRICAL  
Document Number 0287024  

相关型号:

KBU8G-E4

DIODE 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Rectifier Diode
VISHAY

KBU8G-E4/51

Diode Rectifier Bridge Single 400V 8A 4-Pin Case KBU Bulk
VISHAY

KBU8G-E451

Single-Phase Bridge Rectifier
VISHAY

KBU8G/1

Bridge Rectifier Diode, 6A, 400V V(RRM),
VISHAY

KBU8G/51-E4

DIODE 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Rectifier Diode
VISHAY

KBU8GP

DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBU, 4 PIN, Bridge Rectifier Diode
MCC

KBU8GPT

SILICON BRIDGE RECTIFIER
CHENMKO

KBU8J

8.0 Ampere Silicon Bridge Rectifiers
FAIRCHILD

KBU8J

SINGLE-PHASE BRIDGE RECTIFIER
VISHAY

KBU8J

SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes)
PANJIT

KBU8J

SINGLE-PHASE SILICON BRIDGE
GOOD-ARK

KBU8J

4.0A/6.0A/8.0A SINGLE - PHASE SILICON BRIDGE
SEMTECH